WPM2009D -20v, -4a, 42m ? , 2.0w, dfn3x3, p-mosfet descriptions this single p-channel mosfet is produced using trench process that provides minimum on resistance performance. WPM2009D is enhancement power mosfet with 2.0w power dissipation mounting 1 in 2 pad in a dfn3x3 package. this device is suited for high power charging circuit of mobile phone application. it also can be used in a high power switching application. features z max ? @ vgs=-4.5v z max vds -20v z max current -4.0a z typical vgs(th) -0.65v @ id=-250ua z power dissipation 2.0w (note2) z high performance trench process z dfn3x3-8l package z pb-free applications z battery charging z load switch z power switch z dc-dc converter bottom dfn3x3-8l bottom pin connection top wpm2009 = part number yy = year ww = week marking order information device package shipping WPM2009D-8/tr dfn3x3-8l 3000/tape&reel rds(on) 42m 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
maximum ratings (t a =25 o c unless otherwise noted) thermal resistance ratings note1 note2 symbol parameter ratings unit v ds drain-to-source voltage -20 v v gs gate-to-source voltage ? 12 v drain current C continue note1 -4.0 a drain current C continue (t<5s) note1 -4.9 a drain current C continue note2 -6.5 a i d drain current C pulsed (t<300us, duty<2%) note2 -24 a power dissipation C note1 1.0 w power dissipation C (t<5s) note1 1.5 w p d power dissipation C note2 2.0 w t j operation junction temperature range 150 o c t sg storage temperature range -55~150 o c symbol parameter max. unit r t ja thermal resistance, junction to ambient C note1 125 o c/w r t ja thermal resistance, junction to ambient C note2 62 o c/w note1 : surface mounted on a 2 oz copper, recommend minimum pad, fr-4 board. note2 : surface mounted on a 2 oz copper, 1 in 2 pad with dual side, fr-4 board. WPM2009D 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (t a = 25 o c, unless otherwise noted) symbol parameter test condition min typ. max unit off characteristics v( br ) dss drain-source breakdown voltage v gs =0v, i d =-250a -20 v i dss zero gate voltage drain current v ds =-16v, v gs =0v -1.0 ua i gss gate Csource leakage current v gs 12v, v ds =0v ? 100 na on characteristics v gs(th) gate threshold voltage v gs =v ds , i d =-250a -0.35 v gs =-4.5v, i d =-4.0a 42 59 m ? v gs =-2.5v, i d =-3.5a 54 74 m ? r ds(on) drain-source on-resistance v gs =-1.8v, i d =-3.0a 77 93 m ? g fs forward transconductance v ds =-5v, i d =-3.3a 3.0 s dynamic characteristics ciss input capacitance 700 850 1000 pf coss output capacitance 100 150 200 pf crss reverse transfer capacitance v ds =-6v, v gs =0v, f=1.0 mhz 80 120 150 pf q g(tot) total gate charge 8 12 15 nc q g(th) threshold gate charge 0.4 0.6 0.8 nc q gs gate-source charge 1.2 1.6 2.0 nc q gd gate-drain charge v ds =-6v,i d =-3.3a, v gs =-4.5v 1.8 2.2 2.6 nc switching characteristics t d(on) turn-on delay time 15 19 25 ns t r turn-on rise time 5 8 15 ns t d(off) turn-off delay time 80 100 120 ns t f turn-off fall time v gs =-4.5v, v ds =-6v, i d = -1.0a, r g =6.0 ? 15 25 35 ns drain-to-source diode characteristics v sd forward diode voltage v gs =0v, i s =-1.6a -0.7 v -0.65 -1.00 v WPM2009D 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical performance graph (t a = 25 o c, unless otherwise noted) output characteristics on-resistance vs. drain current on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage threshold voltage 0 4 8 12 16 20 012345 v gs =-5 thru -2.5 v -1 v -1.5 v -v ds - drain-to-source voltage (v) - drain current (a) -i d -2 v 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 25 c 125 c -v gs - gate-to-source voltage (v) - drain current (a) -i d t c = - 55 c 0.00 0.02 0.04 0.06 0.08 0.10 0 4 8 12 16 20 v gs =-4.5 v v gs =-2.5 v - on-resistance ( ) r ds(on) -i d - drain current (a) 0.00 0.03 0.06 0.09 0.12 0.15 012345 i d =- 4 . 0 a - on-resistance ( ) r ds(on) -v gs - gate-to-source voltage (v) i d = - 3 a - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = -250 a variance (v) v gs(th) t j - temperature (c) 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 v gs =-4.5 v i d =- 4 . 0 a t j - junction temperature (c) (normalized) - on-resistance r ds(on) WPM2009D 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
ga t e charge source-drain diode forward voltage capacitance safe operating area normalized thermal transient impedance, junction-to-ambient 1.0 1.2 0.1 10 20 0.0 0.2 0.4 0.6 0.8 t j = 150 c -v sd - source-to-drain voltage (v) - source current (a) -i s 1 t j = 25 c 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse - drain current (a) -i d p(t) = 10 dc 0.1 i d(on) limited r ds(on) * limited by bvdss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001 i dm limited v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified square wave pulse duration (s) normalized effective transient thermal impedance 2 1 0.1 0.01 10 -3 10 -2 1 10 600 10 -1 10 -4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 125 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0 1 2 3 4 5 v ds =-6 v i d =-3.3 a - gate-to-source voltage (v) q g - total gate charge (nc) -v gs 03691215 0 200 400 600 800 1000 1200 048121620 c rss c oss c iss -v ds - drain-to-source voltage (v) c - capacitance (pf) WPM2009D 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimension dfn3x3-8l top view side view bottom view dimensions in millimeters symbol min. max. a 0.7 0.8 a1 0.00 0.05 a3 0.203 ref. d 2.9 3.1 e 2.9 3.1 d1 2.2 2.4 e1 1.4 1.6 k 0.200 min. b 0.18 0.3 e 0.650 typ. l 0.375 0.575 WPM2009D 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
pcb layout guide recommend minimum pad guide unit: mm WPM2009D 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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